| 摘要 |
PURPOSE:To stabilize a crystal grain boundary and obtain a higher critical temperature by making an oxide superconductive material having a different component element or a different stoichiometry ratio a multilayer thin film structure. CONSTITUTION:The first target for forming an oxide superconductive thin film and the second target for forming an oxide superconductive thin film having a different element or a different mixing rate from the first target are made to be sputtered, and laminated in multilayer on a substrate having room temperature -700 deg.C with the formed surface rotated. The first thin layer formed has the formula of (A1-xBx)yCuzOwXv, where x=0.1-1.0, y=2.0-4.0, z=1.0-4.0, w=4.0-8.0, and v=3.0, the second thin layer has the formula of (A'1-x'B'x')y'Cuz'Ow'X'v', where x'=0.1-1.0, y'=2.0-4.0, z'=1.0-4.0, w'=4.0-8.0, and v'=0-3.0, A and A' are elements selected from one or plural species of the element periodic table IIIa group, B and B' contain elements selected from one or plural species of the element periodic table IIa group, and X and X' contain elements of one or plural species selected from Si, Ge, Sn, Pb, In, or Sb, or a halogen element. |
