| 摘要 |
<p>PURPOSE:To offer a thin film transistor wherein the irregularity of stray capacitance is small, by forming a cross-shaped gate electrode, via a gate insulating film, on a plane parallel to the plane on which a source electrode and a drain electrode are formed. CONSTITUTION:A gate electrode 1004 divides a semiconductor layer 1003 with two protruding parts parallel to the longitudinal direction of a source electrode 1001 and a drain electrode 1002. Further, the gate electrode 1004 divides the source electrode 1001, the drain electrode 1002, and a semiconductor layer 1003 in the vertical direction to the source electrode 1001. In the thin film transistor formed in this manner, even if the gate electrode 1004 generates a pattern displacement in the arrow 1005 direction as shown in figure (b), an overlapping area between the source electrode 1001 and the drain electrode 1002, and the gate electrode 1004 is constant, and the change of stray capacitance does not occur.</p> |
