| 摘要 |
PURPOSE:To enable a superconducting thin film of low permittivity to be formed in parallel with a substrate surface by a method wherein a Y2O3-BaO-CuO superconductor is filmed meeting the specific requirements for filming speed and gas pressure and using MaO cleaved in a face 100 as the substrate. CONSTITUTION:A thin film of Y2O3-BaO-CuO oxide is formed on a magnesia single crystal substrate cleaved in a face 100 at the filming speed not exceeding 20Angstrom /min and the gas pressure exceeding 40mT to orient the crystalline direction in low electric resistance in parallel with the substrate. For example, said thin film is formed by RF magnetron sputtering process while a target is composed of T0.4Ba0.6CuO3-delta. The applicable target is manufactured by blending and mixing specified amount of Y3O3, BaCO3, CuO as materials and after baking them at 900 deg.C for 12 hours in the air, crushed and mixed with one another again to be pressed down at the pressure of 200kg/cm<2>. Furthermore, the sputtering gas shall be mixed with 90% argon and 10% oxygen; the distance between the substrate and the target shall be 8cm; and the substrate temperature shall be 600 deg.C. |
