摘要 |
<p>The invention concerns organometallic compounds which are intramolecularly stabilized and have a cyclic or bicyclic structure and their use for manufacturing thin films and epitaxial layers by vapour deposition. The organometallic compounds have the formula (I), where M = Al, In or Ga; Y = N, P, As or Sb and the symbols R1, R2, M, N and o have the meaning given in claim 1.</p> |