| 摘要 |
PURPOSE: To reduce the number of BICMOS process steps by a method, wherein prior to the formation of source/drain junctions and an extrinsic base regions of MOS transistors, a protective cap is fitted on an emitter electrode to form the emitter electrode. CONSTITUTION: After a polycrystalline silicon gate electrode 50 and an emitter electrode 56 doped, in respective MOS and bipolar transistor regions 24, 22 are formed, first titanium layers 52, 58 and protection oxide layers 54, 60 are deposited on the electrodes 50, 56. Next, a second titanium layer 78 is covered, and first and second titanium layers are made to react with each other to form silicide between exposed silicon and polycrystalline silicon. Thereafter, after impurities have been inserted into a intrinsic base region 44 in the region 22 and silicide layers 84, 86, 78, 80 in the region 24, impurities are drive-diffused from silicide to a substrate by an annealing processing, and P<+> -type regions 116, 118, 120, 122 of metal junction are formed to be source/drain junctions and an extrinsic base.
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