| 发明名称 |
ELECTRONIC AND OPTOELECTRONIC DEVICES UTILIZING LIGHT HOLE PROPERTIES |
| 摘要 |
Improved p-channel FETs and optoelectronic devices make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs (10, 40, 60, 90) which have electrically induced and controllable one dimensional p-type semiconductor wires; square well two-dimensional p-channel FETs (300, 330, 380); and laser diodes (160, 180, 210, 230) and light emitting diodes (260) which use one dimensional p-type semiconductor wires. |
| 申请公布号 |
WO8901704(A1) |
申请公布日期 |
1989.02.23 |
| 申请号 |
WO1988US02747 |
申请日期 |
1988.08.12 |
| 申请人 |
REGENTS OF THE UNIVERSITY OF MINNESOTA |
发明人 |
XU, JINGMING;SHUR, MICHAEL;SWEENY, MARK |
| 分类号 |
H01L27/06;H01L29/417;H01L29/775;H01L29/778;H01L29/80;H01L33/00;H01L33/24;H01S5/00;H01S5/042;H01S5/22;H01S5/34;(IPC1-7):H01L27/12;H01L29/78;H01L27/02;H01L29/48;H01L29/161 |
主分类号 |
H01L27/06 |
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