| 摘要 |
Temperature variations across the surface of a semiconductor wafer (12), having at least one major surface thereof exposed to a source of radiant heat energy (18), are reduced by positioning a reflective ring (30, 30', 30'' or 30''') proximate the wafer edge (28). The reflective ring (30, 30', 30'' or 30''') reflects the heat energy towards the wafer periphery (27) to provide substantially uniform heat across the wafer. |
