发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING IT |
摘要 |
<p>A compound semiconductor device comprises an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.</p> |
申请公布号 |
EP0143656(B1) |
申请公布日期 |
1989.02.22 |
申请号 |
EP19840308259 |
申请日期 |
1984.11.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
YAMASHITA, YOSHIMI;KOSEMURA, KINJIRO;ISHIWARI, HIDETOSHI;YAMAMOTO, SUMIO;KURODA, SHIGERU |
分类号 |
H01L21/306;H01L21/8236;H01L21/8252;H01L27/06;H01L29/778;(IPC1-7):H01L21/306;H01L29/80;H01L27/08;H01L21/82 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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