| 摘要 |
A photosensor device, comprises a semiconductor layer formed on an insulating substrate and composed of first semiconductor areas (e.g. 3, 13) of one conductivity type or intrinsic type and second semiconductor areas (e.g. 4, 24, 14) of the other conductivity type. A horizontal type photosensor is formed by a junction between said first semiconductor areas and second semiconductor areas while a field effect transistor constituting a processing circuit for the sensor signal is simultaneously formed with a source and a drain composed of said second semiconductor areas (e.g. 14, 24) and with a channel area composed of said first semi-conductor area (e.g. 13) positioned between said source and drain. |
