Bi-mos circuit capable of high speed operation with low power consumption.

摘要

A Bi-MOS circuit includes an input terminal (11), an output terminal (12), an N-channel MOS transistor (14) having a gate connected to the input terminal, a source connected to the ground and a drain, an NPN bipolar transistor (17) having a collector connected to a first power voltage line (VCC), an emitter connected to the output terminal (12) and a base connected to a drain of the N-channel MOS transistor (14), a load element (13) connected between the base of the NPN bipolar transistor (17) and a second power voltage line (VCC) lower than the first power voltage line and a switching element (15, 18) connected between the output terminal (12) and the ground and having a control electrode connected to the input terminal (11), the switching element connecting the output terminal and the ground when a first level of input signal turning the N-channel MOS transistor (14) on is inputted to the input terminal (11) and disconnecting the output terminal (12) from the ground when a second level of the input signal turning the N-channel MOS transistor (14) off is inputted to the input terminal.