| 发明名称 |
Semiconductor device having electrodes and or interconnections of refractory metal film containing silicon oxide |
| 摘要 |
A semiconductor device which is provided with an electrode and/or an interconnection made of a refractory metal film containing silicon oxide is disclosed. A refractory metal film containing silicon oxide has high capability of blocking penetration of ions and is suitable for being employed as a mask for forming a source and a drain of an MOS transistor by ion-implantation and as it has strong adhesion with an insulation film improves reliability of a semiconductor device.
|
| 申请公布号 |
US4807015(A) |
申请公布日期 |
1989.02.21 |
| 申请号 |
US19870048968 |
申请日期 |
1987.05.13 |
| 申请人 |
HITACHI, LTD. |
发明人 |
KOBAYASHI, NOBUYOSHI;HARA, NOBUO;IWATA, SEIICHI;YAMAMOTO, NAOKI |
| 分类号 |
H01L29/78;H01L21/266;H01L21/28;H01L21/3205;H01L23/52;H01L23/532;H01L29/423;H01L29/43;H01L29/45;H01L29/49;(IPC1-7):H01L23/48 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
