Method of manufacturing integrated circuit semiconductor device

摘要

A method of manufacturing integrated circuit semiconductor device in which a check pattern of resist film is formed for monitoring a state of an element-forming resist pattern having a narrow interval of 1.0 mu m or less is disclosed. The check pattern is designed such that a plurality of resist stripes are arranged with intervals therebetween. Each of the intervals is of 1.0 mu m or less and the width of the resist stripe is three times or more the interval.