发明名称 |
Tin oxide CCD imager |
摘要 |
A novel process for fabricating a CCD imager arrray (10) having a tin oxide electrode monolayer (18) is disclosed. The process includes a low pressure chemical vapor deposition step using tetramethyltin and oxygen, and an ion implantation step that increased conductivity of the tin oxide electrodes to as high as 700 ohm-1 cm-1.
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申请公布号 |
US4807004(A) |
申请公布日期 |
1989.02.21 |
申请号 |
US19860935664 |
申请日期 |
1986.11.26 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WAN, CHANG-FENG;TUNG, YINGSHENG;FRANK, STEVEN N. |
分类号 |
H01L29/423;H01L29/768;H01L31/18;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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