发明名称 Tin oxide CCD imager
摘要 A novel process for fabricating a CCD imager arrray (10) having a tin oxide electrode monolayer (18) is disclosed. The process includes a low pressure chemical vapor deposition step using tetramethyltin and oxygen, and an ion implantation step that increased conductivity of the tin oxide electrodes to as high as 700 ohm-1 cm-1.
申请公布号 US4807004(A) 申请公布日期 1989.02.21
申请号 US19860935664 申请日期 1986.11.26
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 WAN, CHANG-FENG;TUNG, YINGSHENG;FRANK, STEVEN N.
分类号 H01L29/423;H01L29/768;H01L31/18;(IPC1-7):H01L29/78 主分类号 H01L29/423
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