发明名称 |
Semiconductor memory device with a detection circuit to detect word line potential |
摘要 |
A one-transistor one-capacitor type semiconductor memory device having a detection circuit for detecting the electric potential of a word line, to determine an appropriate timing for driving a sense amplifier, thereby improving the speed of memory operations.
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申请公布号 |
US4807193(A) |
申请公布日期 |
1989.02.21 |
申请号 |
US19870018559 |
申请日期 |
1987.02.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEMAE, YOSHIHIRO;TAKEMATSU, TAKEO;SATO, KIMIAKI;HORII, TAKASHI;KODAMA, NOBUMI;YANAGISAWA, MAKOTO;TAKADA, YASUHIRO |
分类号 |
G11C11/409;G11C7/22;G11C8/18;G11C11/407;(IPC1-7):G11C7/00;G11C8/00 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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