发明名称 Semiconductor memory device with a detection circuit to detect word line potential
摘要 A one-transistor one-capacitor type semiconductor memory device having a detection circuit for detecting the electric potential of a word line, to determine an appropriate timing for driving a sense amplifier, thereby improving the speed of memory operations.
申请公布号 US4807193(A) 申请公布日期 1989.02.21
申请号 US19870018559 申请日期 1987.02.25
申请人 FUJITSU LIMITED 发明人 TAKEMAE, YOSHIHIRO;TAKEMATSU, TAKEO;SATO, KIMIAKI;HORII, TAKASHI;KODAMA, NOBUMI;YANAGISAWA, MAKOTO;TAKADA, YASUHIRO
分类号 G11C11/409;G11C7/22;G11C8/18;G11C11/407;(IPC1-7):G11C7/00;G11C8/00 主分类号 G11C11/409
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