| 摘要 |
An improved disk exchangeable target mechanism for an ion implantation system includes an effective cooling means for preventing thermal damage to a resist and for improving an implantation quality of semiconductor wafers. The target mechanism includes a metal disk on which a semiconductor wafer(s) to be ion-implanted are mounted on a first face thereof, a support including a metal base having the target disk mounted thereon, and a shaft incorporated with the base, and a medium, provided between a second face of the target disk opposite to the first face and the base, for thermally contact therebetween. Preferably, the base of the support is provided with a cavity and the shaft is provided with holes communicating with the cavity, whereby a cooling medium is inserted into the cavity through one hole and is drained from the cavity through another hole. Furthermore, preferably, the target disk is provided with a thermal transportation unit, such as heat pipes, for transporting thermal energy from a portion(s) at which a high temperature is caused by ion implantation energy, to another portion(s) at which the temperature is low.
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