Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator and a Schottky diode

摘要

An integrated circuit in complementary circuit technology comprising a substrate bias voltage generator which applies a negative (positive) substrate bias voltage to the p(n) substrate in which n(p) tubs are inserted. The source regions of the n(p)-channel FETs arranged in the substrate lie at ground potential. In order to avoid "latch-up" effects, an output of the substrate bias voltage generator is connected via a Schottky diode to a circuit point that lies at ground potential.