发明名称 |
Static memory cell using a heterostructure complementary transistor switch |
摘要 |
A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound semiconductor materials. Two HCTS are formed on a single substrate to form a memory cell. A collector and a base on one of the HCTs are connected to a base and a collector, respectively, on the other HCTS to form the memory cell.
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申请公布号 |
US4807008(A) |
申请公布日期 |
1989.02.21 |
申请号 |
US19870095974 |
申请日期 |
1987.09.14 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
CHANG, MAU-CHUNG F.;ASBECK, PETER M.;WANG, KEH-CHUNG;MILLER, DAVID L. |
分类号 |
G11C11/411;H01L27/06;H01L27/102;H01L29/737;(IPC1-7):H01L29/72 |
主分类号 |
G11C11/411 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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