| 摘要 |
<p>PURPOSE:To obtain a nonlinear resistor chemically stable against SF6 gas by forming a high resistance layer containing fluorine on the side face of an element. CONSTITUTION:Fluorine is contained in a high resistance layer 3. Bismuth, iron and fluorine are brought respectively to 0.3-50mol%, 50-95mol% and 0.1-20mol% in conversion into Bi2O3, Fe2O3 and ZnF2 regarding the high resistance layer 3 mainly comprising iron and including fluorine as an additive. Bismuth, iron, antimony and fluorine are brought separately to 0.3-20mol%, 50-95mol%, 5-50mol% and 0.1-20mol% in conversion into Bi2O3, Fe2O3, Sb2O3 and ZnF2 regarding the high resistance layer 3 mainly comprising iron and antimony and including fluorine as the additive. Accordingly, a nonlinear resistor, the high resistance layer of which functions as stable phase to SF6 gas, is acquired.</p> |
