| 摘要 |
PURPOSE:To obtain excellent semiconductor characteristics, by introducing carrier gas in contact with an organic metal compound, which is an impurity compound, into a vacuum container, regulating the temperature of the organic metal compound and/or the flow rate of the carrier gas, and controlling the doping amount of the impurities. CONSTITUTION:Carrier gas is brought into contact with an organic metal compound, which is a doping compound of impurities, e.g., trimethylboron(TMB)5' or trimethylaluminum. The carrier gas is introduced into a vacuum container 4. The temperature of the organic metal compound and/or the flow rate of the carrier gas are regulated. In this way, the doping amount of the impurities is controlled. Thus, a film, whose energy gap is large and resistance value is low, can be readily manufactured. Since toxic gas such as B2H6 is not used, safety in working is achieved. |
