| 摘要 |
PURPOSE:To enable to form a suitable pattern by a lift-off method by forming a phosphagen polymer layer on a substrate contg. a resist pattern, followed by removing the phosphagen polymer layer until the surface of the resist pattern exposes, and then by removing the resist pattern. CONSTITUTION:The phosphagen polymer layer 45 is formed on the substrate 41 contg. the resist pattern 43, and then said layer 45 is removed until the surface of the resist pattern 43 exposes. Accordingly, as the resist pattern having the prescribed form is formed by changing an exposure condition, a developing condition and the thermally treating condition of a developed resist, respectively, the phosphagen type polymer pattern with a prescribed overhang form is easily obtd. Thus, a metal pattern can be obtd. by the lift-off method. |
