发明名称 Process for producing homogeneous silicon nitride sintered bodies
摘要 A homogeneous silicon nitride sintered body is produced by presintering a shaped body and then subjecting it to treatment by hot isostatic pressing (HIPping) in a special atmosphere at from 1500 to 1700@C and a pressure of over 20.3 MPa and less than 50.7 MPa, or by firing the shaped body in a special atmosphere in such a way that the content of CO gas is not more than 10% at a temperature of not less than 800@C.
申请公布号 DE3825955(A1) 申请公布日期 1989.02.16
申请号 DE19883825955 申请日期 1988.07.29
申请人 NGK INSULATORS, LTD., NAGOYA, AICHI, JP 发明人 MATSUBARA, REIJI, AICHI, JP;HAYAKAWA, ISSEI, NAGOYA, AICHI, JP
分类号 C04B35/593 主分类号 C04B35/593
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