AN OHMIC CONTACT FOR AN INTERMETALLIC COMPOUND SEMICONDUCTOR AND A METHOD OF PROVIDING SUCH A CONTACT

摘要

A metallic ohmic contact (1) is formed on the surface of an intermetallic compound semiconductor body (2) in which the net donor density of an amphoteric dopant is greater in a thin surface region extending into the body from the interface (3) between the contact (1) and the body (2) than in the bulk of the body (2). Preferably, the surface region has a net donor density greater than 5 x 10<1><9> atoms per cc and is 2 to 5 nm thick. The contact can be formed by growing a body of gallium arsenide in the presence of an arsenic over-pressure and a source of germanium or silicon and then depositing a metal on the surface of the body.