| 摘要 |
PURPOSE:To contrive mass production by forming field effect elements respectively on the surfaces of 1st and 2nd element forming regions, polishing the rear face, joining an insulating substrate to the exposed surface, removing the holding substrate and forming enzyme films selectively on an ion sensitive film. CONSTITUTION:The 1st and 2nd element forming regions 8, 9 are segmented by a groove 15 on the p-type silicon substrate and after a silicon dioxide film 2 is formed thereon, an n-type impurity is introduced therein to form source regions 6a, 6b and drain regions 7a, 7b respectively in the regions 8, 9. The film 2 on the regions 8, 9 are removed and thereafter, the silicon dioxide film 2 and a silicon nitride film 3 are again deposited to form the field effect element provided with the ion sensitive film on the surface. The element surface is then adhered to the holding substrate and the rear face is polished down to the groove 15 and is adhered to the quartz glass substrate 12. The holding substrate is removed and the enzyme films 14 are selectively formed on the ion sensitive film of the 1st field effect element. Since this sensor is formed by using the semiconductor wafer and polishing and joining the same, the mass production of the sensor with good reproducibility is possible. |
