| 摘要 |
PURPOSE:To facilitate the control of properties of an element by a method wherein the same impurity is introduced into a single crystallized semiconductor layer by a plurality of times, resulting in a desired profile of impurity concentration. CONSTITUTION:A non-doped polycrystalline Si layer 2 is adhered on an SiO2 insulation substrate 1, and the layer is single crystallized by the irradiation of energy rays from above. Next, boron ions are implanted in order to change the single crystal layer 2 into a P type layer. Then, a gate insulation film composed of an SiO2 film is formed, and boron is made to distribute uniformly over the single crystal layer 2. Further, the second boron ions are implanted from above. |
