| 摘要 |
PURPOSE:To prevent defective voltage resistance and the degradation in head efficiency by providing patterns for deciding the end of insulating film etching to the lower part of an insulating film. CONSTITUTION:The patterns for deciding the end are formed by using the same material as a magnetic material at the time of forming the core pattern of a lower magnetic material. Two pieces of the patterns 8 for deciding the end are formed by each one piece on the right and left of the lower magnetic material 2. These patterns are formed in order to eliminate the fluctuation in the zero position of a magnetic gap position generated by the influence of the pattern deviation which rises when the photoresist pattern for taper etching of the insulating film is formed. The patterns are further formed to the slit patterns to facilitate the decision of the end and the prediction of the time when the etching ends while observing the progressing condition of the etching as shown in the magnified view of the pattern for deciding the end. The line and space of the slit is made to 2mum. |
