PRODUCTION OF THIN FILM PATTERN

摘要

PURPOSE:To prevent the resticking by etching so that patterning can be executed with high accuracy by partially exposing the thick part of a photosensitive resin film in the lower part of a step to decrease the thickness in said part, then executing etching. CONSTITUTION:A positive type photoresist 18 is coated on a 'Permalloy(R)' film 13. A positive type resin which decreases in the film thickness by a specified amt. when applied with a specified quantity of exposing energy is used for this photosensitive resin film. The thin part of the photoresist 18 is mum and the thick part in the lower part of the step is 13mum at this time. This film is exposed only in the thick part in the lower part of the step by using a projection exposing machine to reduce the photoresist thickness to 3mum. The 'Permalloy(R)' film 13 is thereafter patterned by ion beam etching with the thin resin film as a mask material. Since the resist film is thin, the film does not restick and the patterning with the high accuracy of <=+ or -0.6mu is possible.