| 摘要 |
PURPOSE:To obtain a circuit suitable for circuit integration on a substrate with high dielectric strength and accuracy, by providing a buffer comprising a high dielectric strength MOS transistor (TR) to an output element of a current mirror circuit comprising a low dielectric strength element. CONSTITUTION:The buffer consisting of the high dielectric strength MOS TR7 is provided to an output terminal of a conventional current mirror circuit 10. A gate of the TR7 is connected to a constant voltage source V2, the source potential is constant and the mirror ratio is kept to a high accuracy. Since an MOSFET is used for the TR7, the Leakage current of the gate is small and no deterioration in the accuracy of mirror ratio due to the provision of the TR7 takes place. The current mirror 10 is constituted with a self-aligning gate MIS TR of low dielectric strength element and the TR7 is constituted with an offset gate MIS TR, then they are formed on the same substrate without increasing the number of processings. |
