| 摘要 |
PURPOSE:To largely reduce the area occupied by a diode by selectively opening first and second insulating films formed on a substrate and utilizing it as a mask for implanting impurity for directly and selectively oxidizing and forming an impurity layer through the opening. CONSTITUTION:The steps of forming first and second insulating films 12, 13 on a conductive substrate 11, selectively opening the first and second insulating films, forming a third insulating film 14 in the opening with the film 13 as a mask, adding an impurity through the first, second and third insulating films, and forming a Schottky junction in the opening after removing the film 14 are provided. That is, the first and second films formed on the substrate are selectively opened and the opening is utilized as a mask for directly selectively oxidizing and implanting the impurity, a silicide layer is further formed and brought into contact with an impurity layer. Thus, one opening is employed to form a Schottky diode with a guard ring, thereby largely reducing the area by occupied the diode. |
