| 摘要 |
PURPOSE:To read stored data independently of normal reading and writing by providing a normal storage circuit with another bit line and a selection line and outputting data that a storage cell retains to said bit line. CONSTITUTION:Selection lines S11 and S11' provided separately from a normal selection line S1 are held at a source voltage VDD and ground potential, etc., and then a data output circuit O1 consisting of MOS transistors (TR) M20- M23 is activated. Consequently, the held data in the storage cell Ce appears on the bit line BL1 provided separately from normal bit lines BL and BL' through the circuit O1 to read the stored data independently of normal reading and writing operation. |
