Manufacture of diodes.

摘要

A method of manufacturing diodes comprises the steps of introducing a dopant of a first conductivity type into one surface (3) of a layer of intrinsic material (1); growing a polysilicon layer (9) onto the surface into which the first conductivity type dopant was introduced; thinning the layer of intrinsic material (1); introducing a dopant of a second conductivity type into the other surface (11) of the layer of intrinsic material (1); and subsequently dividing the layer of intrinsic material (1) into individual elements, each of which constitutes a diode.