发明名称 |
A method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators. |
摘要 |
<p>A structure comprising thin defect-free monocrystalline layer of a silicon of an insulating layer is produced from a structure comprising a thin recrystallizable layer of silicon on an insulating layer by use of a low softening point insulating layer, scanning the structure relative to a zone heater the beams of which are focused on the recrystallizable silicon layer so as to form a melt zone having a convex solid-liquid interface in the silicon layer while forming a liquid area under the melt zone in the insulating layer.</p> |
申请公布号 |
EP0303320(A2) |
申请公布日期 |
1989.02.15 |
申请号 |
EP19880201666 |
申请日期 |
1988.08.02 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
PANDYA, RANJANA;MARTINEZ, ANDRE |
分类号 |
H01L21/20;H01L21/263 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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