| 摘要 |
<p>PURPOSE:To prevent defect of short-circuit of wiring caused by the residue of the exfoliated pieces of a barrier layer, and to prevent the generation of the mechanical damage on a semiconductor element by a method wherein, when a barrier layer is going to be formed in the case where a wiring is formed by plating in a multilayer wiring forming process, the barrier layer is formed by conducting a photoetching treatment. CONSTITUTION:The second photoresist film 10 is exfoliated using an organic solvent, and after an Al conductive layer 8 has been removed by wet etching, the TiN barrier layer 7 and the Ti conductive layer 6, other than the part where the second layer of wiring pattern 11 is formed, are removed by photoetching, and a multilayer wiring is formed. As the TiN barrier layer 7 can be removed without conducting mechanical exfoliation as above-mentioned, the defect of shortcircuit of wiring caused by the residue of the mechanical exfoliation can be prevented, and a multilayer wiring layer can be formed without giving mechanical damage on the semiconductor element.</p> |
