发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To enable a lateral mode oscillation to be stable and obtain laser rays high in an output power by a method wherein a stripe-like mesa section containing an active layer specified in width is formed in a multilayered film built on a substrate, the whole side face of the mesa section is surrounded with a high resistant layer which is larger in a forbidden bandwidth of a energy level but smaller in the refractive index than the active layer, and a clad layer is deposited. CONSTITUTION:A mesa is formed through shallow etching of a region which contains an active layer 3 specified in width, where a material larger in an energy band gap but smaller in the refractive index than the active layer 3 is buried in the whole side face of the mesa, a buried layer 6a and a window layer 9a are simultaneously formed, and further the buried layer 6a and the window layer 9a are disposed in such a structure that they are sandwiched between a first clad layer 2 and a second clad layer 4. By these processes, both the active layer 3 and the window layer 9a accurate in a broadwise dimension can be obtained through a shallow mesa etching, so that the current is made to be constricted sufficiently enough so as to make laser rays stable in a lateral mode oscillation, high in an output, and excellent in property.
申请公布号 JPS6442884(A) 申请公布日期 1989.02.15
申请号 JP19870200164 申请日期 1987.08.11
申请人 FUJI ELECTRIC CO LTD 发明人 KITAMURA SHOJI;KUNIHARA KENJI;SHINDO YOICHI
分类号 H01S5/00;H01S5/16 主分类号 H01S5/00
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