| 摘要 |
PURPOSE:To simplify the processes by a method wherein the first gate electrode of an element and an emitter electrode of a bipolar transistor are formed of the same silicon layer. CONSTITUTION:The first gate electrode of a bipolar transistor are formed of the same polysilicon layer 9 and then a semiconductor device is constituted by heat treatment at the temperature exceeding 1000 deg.C in case of forming the second gate oxide film 13a of the element as well as in case of forming an emitter diffused layer 14 by impurity diffusion from an emitter electrode of the bipolar transistor. Through these procedures, the processes are simplified and made common to cut down the cost thereof. |
