| 发明名称 |
GaAs MESFET |
| 摘要 |
A vertical III-V compound MESFET is provided. The MESFET has a buried P-type layer which separates the source and the drain regions. A small N-type region in the buried P layer connects the source channel to the drain area. This opening in the buried P layer is located underneath the Schottky gate.
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| 申请公布号 |
US4805003(A) |
申请公布日期 |
1989.02.14 |
| 申请号 |
US19870120569 |
申请日期 |
1987.11.10 |
| 申请人 |
MOTOROLA INC. |
发明人 |
HOLM, PAIGE M.;MOYER, CURTIS D. |
| 分类号 |
H01L21/338;H01L29/80;H01L29/812;(IPC1-7):H01L29/205 |
主分类号 |
H01L21/338 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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