| 摘要 |
The invention comprises a semiconductor laser 10 having an attached etalon 18 which imposes two additional reflective cavity resonance conditions on a laser diode 12. The etalon has partially reflective front surface 26 and an inner surface 24 which act in conjunction with the internal cavity of the laser diode 12 to reduce side mode emission from the laser. This results in laser emission of a single dominant mode, i.e., a single discrete wavelength of coherent light, from surface 22.
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