| 摘要 |
<p>PURPOSE:To realize a high integration density and a high speed by a method wherein a one-bit width of a data path block is made to be identical to a one-bit width of a storage block, they correspond to each bit, a spacer region in a Y direction is installed at each bit of the storage block and a wiring operation in the Y direction for the data path block is executed in the spacer region. CONSTITUTION:In a semiconductor integrated circuit device where data path blocks such as an ALU or the like and a storage block such as a register file or the like are arranged in a row in a Y direction, the data path blocks 1, 2 and a register file 3 are arranged in a row in the Y direction; during this process, a one-bit width in an X direction of the data path blocks 1, 2 is made to be identical to a one-bit width in the X direction of the register file 3; these are arranged in corresponding to each bit. In addition, spacer regions SP for wiring part LB use in the Y direction are installed at each bit. By this setup, a wiring operation between individual blocks is simplified; a high integration density and a high signal speed are realized.</p> |
