发明名称 |
Digital memory with reset/preset capabilities |
摘要 |
A digital memory characterized by a plurality of memory cells arranged into a matrix having rows and columns; a row activation circuit for concurrently activating all of the rows of the matrix; and column activation means for concurrently applying either a reset signal or a preset signal to the columns of the matrix. The column activation circuit can include a plurality of digital switches coupled to reset and preset lines associated with each column of the matrix; and reset/preset logic which control the digital switches to selectively couple the reset and preset lines to a constant current source. A complementary, multi-emitter flip-flop memory cell is formed on a semiconductor substrate and includes "riser" portions.
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申请公布号 |
US4805149(A) |
申请公布日期 |
1989.02.14 |
申请号 |
US19860901914 |
申请日期 |
1986.08.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TAM, ALOYSIUS;WONG, THOMAS S.;WANG, DAVID;NAREN, DAVID |
分类号 |
G06F12/08;G11C7/20;G11C11/41;(IPC1-7):G11C11/40 |
主分类号 |
G06F12/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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