发明名称 ALUMINUM NITRIDE SINTERED BODY
摘要 PURPOSE:To produce an AlN sintered body applicable to an insulating substrate having compact structure, high thermal conduction and superior heat dissipation at low cost by incorporating AlN powders with the oxides of Y and V, and mixing the incorporated materials, and molding the mixture, then calcining the molded body under non-oxidizing atmosphere. CONSTITUTION:The aluminum nitride powders are incorporated with the oxides of yttrium and vanadium as addition agents. The suitable amounts of these addition agents are both in the range of 0.01-12wt.%. The incorporated materials are then mixed, molded, and calcined in non-oxidizing atmosphere (e.g., nitrogen gas, in vacuum). The obtained aluminum nitride sintered body is of high thermal conduction having about >=200W/m<2>.k thermal conductivity, and is also superior in electrical and mechanical characteristics, and is capable of application to high temp. materials such as a crucible, vapor-deposition vessel, etc., besides the application to thermal dissipating materials in the fields of semiconductor industry.
申请公布号 JPS6442367(A) 申请公布日期 1989.02.14
申请号 JP19870196353 申请日期 1987.08.07
申请人 ASAHI GLASS CO LTD 发明人 WATANABE KAZUNARI;KAWAKAMI KEIICHI;TAKAHATA MITSUO;SUGIZAKI MASUO
分类号 H05K1/03;C04B35/58;C04B35/581;H01B3/12;H01L23/14;H01L23/15 主分类号 H05K1/03
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