| 摘要 |
PURPOSE:To easily produce a silicon carbide sintered body of superior heat- resistance and gas-impermeability by using a CVD process to deposit a silicon carbide on a porous and recrystallized silicon carbide sintered body whose porosity and max. pore diameter is a prescribed value or below, and gas- tightening the sintered body thereby. CONSTITUTION:The porous and recrystallized silicon carbide sintered body of <=25% porosity and <=50mum max. pore diameter is produced by applying the method using the silicon carbide powder of <=about 200mum max. particle diameter, and forming the silicon carbide powder, and then calcining the formed body, etc. This sintered body is gas-tightened by applying the CVD process to deposit the silicon carbide on the sintered body, and the silicon carbide sintered body of gas-impermeability is obtained thereby. Thus obtained sintered body is of high temp.-resistance, and especially, when this sintered body is applied to an radiant tube for supplying thermal energy by a gas combustion, the surface temp. of this radiant tube can be kept higher than before, and this leads to increase the heat radiation efficiency and thus to increase the heat efficiency in the heating furnace concerned. |
