| 摘要 |
<p>PURPOSE:To obtain a TFD-LCD having about 2,000 pieces of scanning lines by adopting a compd. of carbon and silicon to form an insulator layer of an MIM element. CONSTITUTION:A substrate 1 is coated with a glass protective film 2 consisting of Ta2O5, SiO2, etc., and the insulator layer 4 is formed thereon. The insulator layer 4 of the metal-insulator-metal element (MIM element) is formed of the compd. of carbon and silicon. The dielectric constant epsilon is lowered and the value of the parallel parasitic capacity of the MIM element is lowered down to a negligible value by using the compd. of the carbon and silicon for the insulator layer 4. A nonlinear coefft. beta of >=6 is obtd. and a high nonlinear resistance characteristic is obtd. by controlling film forming conditions. The good MIM characteristic is thereby obtd. and the thin film two terminal element type active matrix liquid crystal display device (TFD-LCD) having about 2,000 number of scanning lines is obtd.</p> |
