| 摘要 |
PURPOSE:To increase the height of a Schottky barrier, and reduce the gate leak current, by installing a Schottky gate electrode on a modulation doped layer composed of AlInAs via a multilayer super lattice film of AlInAs/A GaAs. CONSTITUTION:On a semiinsulative InP substrate 1, the following are provided: a high purity Ga0.47In0.63As layer 2 arranged in the manner of lattice-matching with the substrate, an Al0.48In0.52As layer 4 which is lattice-matched with the layer 2 to form an electron storage layer 3 in the layer 2 and forms a hetero junction with discontinuity of a specific conduction band by doping N type impurity at least in a part, and a gate electrode 7 which controls the electron concentration of the electron storage layer 3 in the layer 2 via a five-layer super lattice film composed of Al0.48In0.52As layer of 2nm thick and an AlxGa1-xAs (0<x<1), e.g., Al0.4Ga0.6As layer of 2nm thick, which have the respective film thicknesses smaller than or equal to the critical film thickness generatating lattice mismatching dislocation and are lattice-matched with the layer 4. By the constitution like this, the effective height of Schottky barrier is increased in the state without generating transition, and the gate leak current can be reduced. |
