| 摘要 |
PURPOSE:To connect an electrode film to both semiconductor layers without performing a process with excellent precision such as photoprocess etc., by a method wherein a substrate coated with a primer film and a conductive film is heated up to the temperature making a substrate material and a primer film metal diffuse each other so that the primer film metal may diffuse into other semiconductor layer getting over one semiconductor layer. CONSTITUTION:The surface of an n-type layer 22 is coated with a primer film 31 for electrode film and a conductor film 32 through the intermediary of a window made in a phosphorus glass film 13 by sputtering process to be closely adhered to the surface of n type layer 22 continuously. Besides, the coated primer layer 31 comprises titanium in thickness of around 0.1mum while the coated conductive film 32 comprises aluminum in thickness of around 3mum. Next, s substrate 10 is heated at 450 deg.C to make the primer layer 31 diffuse deep into the silicon of substrate 10. Due to such a heat treatment, the titanium in the primer film 31 can be diffused deep along the crystalline defect of silicon caused during the ion-implanting process and its top enters a p-type layer 21 beyond the n-type layer 22 as deep as about 0.5mum. Through these procedures, the electrode film can be conduction-connected with the semiconductor layers without fail. |
