| 摘要 |
PURPOSE:To realize a high-speed response by a method wherein a current constriction is completely executed by burying a luminous region in a substrate and a parasitic capacity is decreased as a P-N junction does not exist on the periphery of the luminous region. CONSTITUTION:An etching is performed on an S.I-InP grown layer 30 up to reach to an InGaAsP layer 20 to form an aperture 60A and thereafter, the layer 20 is selectively etched with an etching liquid consisting of a sulfuric acid, hydrogen peroxide, water and so on to form a lateral hole 60B. Then, an N-type InP layer 50 is selectively grown in the aperture 60A and the lateral hole 60B, which are etched. Then, a groove 60C is formed in the layer 30 by etching in such a way as to reach to the layer 50. Moreover, an N-type InP clad layer 51, an InGaAsP active layer 70, a P-type InP clad layer 80 and a P-type InGaAsP contact layer 90 are grown in order in the groove 60C, a buried laser is formed in the layer 30 and moreover, P-type and N-type electrodes 100 and 110 are formed in the same plane. |
