STANDARD-CELL INTEGRATED CIRCUIT

摘要

PURPOSE:To improve integration density of a standard-cell integrated circuit by composing a CMOS functional block using a pair of P-channel and N-channel cells which are independent of each other. CONSTITUTION:A pair of N-channel and P-channel cells which are independent of each other are used to constitute a CMOS 2-input NAND block. For constituting the 2-input NAND circuit, input A is applied to one of a multicrystalline silicon film 105 of a cell 100 by the first-layer metal wiring 122 and the second metal wiring 123. Input B is applied to one of the multicrystalline silicon film 105 of a cell 101 by the second-layer metal wiring 123 and output X is taken from the cell 101 to the second-layer metal wiring 123 and first-layer metal 122. Thus, the input B can use the first-layer metal wiring which enter the MOSFET area between the P-channel cell 100 and N-channel cell 101. It allows the wiring channel area to be reduced for a improve degree of integration.