| 摘要 |
PURPOSE:To implement high integration density and to improve a yield rate, by forming Schottky electrodes, which are to become a Schottky diode, on an impurity regions, which is to become the drain or source of a MESFET. CONSTITUTION:On a GaAs substrate 1, an N<+> region 2, in which N-type impurities are implanted at a high concentration, is formed as the source region of a MESFET. An N-type active layer 51 as the gate and source regions of the MESFET and the cathode region of a diode are formed on the right side of the region 2. An ohmic electrode 12 as a source electrode is formed on the N<+> type region 2. Two Schottky electrodes 15 and 23 are formed on the N-type active layer 51. Namely, a Schottky diode is implemented by the drain region of the MESFET, the N-type region 51 as the cathode region of the diode and the Schottky electrode 23 thereon. Thus the high integration density is implemented and the yield rate is improved. |
