发明名称 MANUFACTURE OF BARIUM TITANATE SEMICONDUCTOR
摘要 PURPOSE:To enable rate of change in resistance at room temperature to be kept less than 5%, by adding Y2O3 with the maximum particle diameter thereof being so controlled as to be less than 3mum, and by varying an added amount of Mn within the specific range. CONSTITUTION:The maximum particle diameter of Y2O3 is so controlled as to be less than 3mum, which enables rate of change in resistance value at room temperature to be small, especially to be kept within 5%. Then, in order to keep the rate of change thereof within 5%, an added amount of Mn is limited within 0.02mol. When the added amount of Mn is less than 0.0004mol, the maximum resistance value resulting from both the resistance at room temperature and the self-heating resistance does not reach 10<14>OMEGA, thereby the characteristics as a barium titanate series PCT thermistor can not be obtained. Consequently, Mn is made to be added in the range of 0.0005-0.002mol, which enables the barium titanate type PCT thermistor having good characteristics to be produced.
申请公布号 JPS6439002(A) 申请公布日期 1989.02.09
申请号 JP19870195946 申请日期 1987.08.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MATSUSHIMA SUSUMU
分类号 H01C7/02 主分类号 H01C7/02
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