| 摘要 |
A monolithically integrated circuit arrangement, which is designed using standard bipolar planar technology and forms an electronic device, is proposed in which the insulation diffusion zones consist of a lower and an upper insulation diffusion. The monolithically integrated circuit arrangement consists of a first circuit section (1), preferably a power section, having a first reference potential (G1) and of a second circuit section (2), preferably a control section, having a second reference potential (G2). The insulation diffusion (131, 141) in the first circuit section (1) is connected to the first reference potential (G1). As a result, the substrate (10; 101, 102) of the entire monolithically integrated circuit arrangement is connected to this first reference potential (G1). The second circuit section (2) is insulated from the substrate (10; 101, 102) by the conductive layer diffusion zone (122) and the lower insulation diffusion zone (132), which both extend over the entire second circuit section (2). The mutual insulation of the circuit elements is effected in the case of the second circuit section (2) by the upper insulation diffusion (142a, 142b), which forms with the lower continuous insulation diffusion zone (132) individual grooves (troughs) for these circuit elements and is connected to the second reference potential (G2) (Figure 2). <IMAGE>
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