发明名称 METHOD FOR MONOCRYSTALLINE ARTICLES FOR SEMI CONDUCTORS
摘要 A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 mu m<2> or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.
申请公布号 AU2045188(A) 申请公布日期 1989.02.09
申请号 AU19880020451 申请日期 1988.08.04
申请人 CANON KABUSHIKI KAISHA 发明人 NAME NOT GIVEN
分类号 C30B19/02;C30B25/02;C30B25/04;C30B25/10;C30B25/16;C30B25/18;C30B29/06;C30B29/42;C30B33/00;H01L21/20 主分类号 C30B19/02
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