| 摘要 |
PURPOSE: To obtain an ionized particle detector which maintains good characteristics for a long time by forming a sensitive part with a region for limiting the expansion of the depletion region. CONSTITUTION: An N<+> -type layer 5 is diffusion-formed on one plane of an N<-> -type Si substrate 1, the front and back surfaces are covered with an SiO2 film 2, holes 21 are formed into the surface where the layer exists by photo lithography, the film 2 is processed to remain only at the marginal edge of the other surface, and other parts are removed to form holes 20 having large areas. B-ions are implanted to form a P<+> regions 11 in the layer exposed in the holes 21, while an SiO2 film 2' is deposited on this surface. P<+> -type regions 3 are formed on the wide holes 20 on the other surface, the entire surface is covered with this film 2', including these, and holes are bored there to form connections 4, and wiring 7 is mounted thereon while a wiring 8 is applied the regions 11 on one surface, thus forming high-capacitive couplings in the regions 11 which are to be the detection regions.
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